收藏本站
ZXMN2A01F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
20V
R DS(ON)
0.12 ? @ V GS = 10V
I D
T A = +25°C
2.2A
?
?
?
Low On-Resistance
Fast Switching Speed
Low Threshold
?
Low Gate Drive
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
?
?
?
?
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
?
Case: SOT23
Applications
?
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
?
DC-DC Converters
?
Moisture Sensitivity: Level 1 per J-STD-020
?
Power Management Functions
?
Terminals: Solderable per MIL-STD-202, Method 208
e3
?
Motor Control
?
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
?
?
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
D
D
G
G
S
Top View
Ordering Information (Note 4)
Part Number
ZXMN2A01FTA
ZXMN2A01FTC
Top View
Pin Configuration
Case
SOT23
SOT23
S
Equivalent Circuit
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
7N2 = Product Type Marking Code
7N2
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
ZXMN2A01F
Document number: DS33513 Rev. 3 - 2
1 of 7
www.diodes.com
March 2014
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMN2A02N8TA MOSFET N-CH 20V 8.3A 8-SOIC
ZXMN2A02X8TC MOSFET N-CH 20V 6.2A 8-MSOP
ZXMN2A03E6TC MOSFET N-CHAN 20V SOT23-6
ZXMN2A04DN8TC MOSFET DUAL N-CHAN 20V 8SOIC
ZXMN2A14FTA MOSFET N-CH 20V 3.4A SOT23-3
ZXMN2AM832TA MOSFET N-CHAN DUAL 20V 8MLP
ZXMN2AMCTA MOSFET 2N-CH 20V 2.9A DFN
ZXMN2B01FTA MOSFET N-CH 20V 2.1A SOT23-3
相关代理商/技术参数
ZXMN2A02N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02N8(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN2A02N8_07 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02N8TA 功能描述:MOSFET 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2A02N8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8TA 功能描述:MOSFET 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube